Transparency range 0.35–5.5 μm, with high optical quality suitable for demanding laser applications.
Two intense Raman shifts: 901 cm⁻¹ (p[mm]p) and 768 cm⁻¹ (p[gg]p), polarization-dependent, making KGW an excellent stimulated Raman scattering (SRS) crystal for frequency conversion.
High Raman gain: 11 cm/GW at 532 nm and 3 cm/GW at 1064 nm in the picosecond transient regime, enabling efficient Raman shifting for ultrashort pulse applications.
Relatively high thermal conductivity: 2.6–3.8 W/(m·K) depending on crystallographic orientation, providing good heat dissipation under high-power operation.
Versatile rare-earth doping host: Gd³⁺ sites can be substituted by Nd³⁺, Yb³⁺, Er³⁺, Tm³⁺, Ho³⁺, Sm³⁺, Eu³⁺, and Pr³⁺, enabling a wide range of laser and upconversion applications.
Good mechanical stability: Mohs hardness of 4–5, suitable for high optical energy and power operation.
Typical Specifications
Crystal structure: Monoclinic, space group C2/c (α-phase, low-temperature form)
Lattice parameters: a = 10.652 Å, b = 10.374 Å, c = 7.582 Å
Coatings: AR (R < 0.5%) @ 500–650 nm; AR/AR @ 500–600 nm + 1000–1200 nm available
Main Applications
Stimulated Raman scattering (SRS): KGW is the primary choice for Raman shifting in picosecond laser systems, enabling wavelength conversion beyond the fundamental laser output. The two Raman shifts (901 and 768 cm⁻¹) provide flexibility in selecting output wavelengths.
Raman lasers: Diode-pumped Nd:GdVO₄/KGW Raman lasers have demonstrated CW operation at 1525 nm, generating specific wavelengths for spectroscopy and sensing applications.